FDMC8884 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDMC8884 Key Features
- Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A
- Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free and RoHS pliant
FDMC8884 Applications
- DC Buck Converters Notebook battery power management Load switch in Notebook