FDMC8884
Features
- Max r DS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A
- Max r DS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A
- High performance technology for extremely low r DS(on)
- Termination is Lead-free and Ro HS pliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
Application
- High side in DC
- DC Buck Converters
- Notebook battery power management
- Load switch in Notebook
Top Pin 1 S S S G
Bottom
D D D D D
5 6 7 8
4 3 2 1
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy...
