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FDMC8884 Datasheet N-channel Power Trench MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMC8884 N-Channel Power Trench® MOSFET April 2012 FDMC8884 N-Channel Power Trench® MOSFET 30 V, 15 A, 19.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.

Application „ High side in DC - DC Buck Converters „ Notebook battery power management „ Load switch in Notebook Top Pin 1 S S S G Bottom D D D D D 5 6 7 8 4 3 2 1 G S S S D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TC = 25 °C TA = 25 °C (Note 1a) Ratings 30 ±20 15 24 9.0 40 24 18 2.3 -55 to +150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 6.6 53 °C/W Package Marking and Ordering Information Device Marking FDMC8884 Device FDMC8884 Package MLP 3.3x3.3 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation FDMC8884 Rev.E3 1 .fairchildsemi.

Key Features

  • Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A.
  • Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free and RoHS Compliant General.

More Datasheets from Fairchild (now onsemi)

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