IRF650A Datasheet Advanced Power MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: Advanced Power MOSFET.

Datasheet Details

Part number	IRF650A
Manufacturer	Fairchild (now onsemi)
File Size	308.93 KB
Description	Advanced Power MOSFET
Datasheet	IRF650A-Fairchild.pdf

Key Features

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max. ) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ. ) 1 2 3 IRF650A BVDSS = 200 V RDS(on) = 0.085 Ω ID = 28 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 oC) Drai.

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Similar Datasheet

Part Number	Description	Manufacturer
IRF650A	N-Channel Mosfet Transistor	Inchange Semiconductor
IRF650A	Advanced Power MOSFET	Samsung
IRF650	200V N-Channel MOSFET	Fairchild Semiconductor
IRF650B	200V N-Channel MOSFET	Fairchild Semiconductor

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