Datasheet Summary
Advanced Power MOSFET
Features
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.)
1 2 3
BVDSS = 200 V RDS(on) = 0.085 Ω ID = 28 A
TO-220
1.Gate 2. Drain 3....
