IRFS650B Key Features
- 15.8A, 200V, RDS(on) = 0.085Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 75 pF) Fast switching 100%
- Part: IRFS650B
- Manufacturer: Fairchild (official site)
- Size: 651.18 KB
Other IRFS650B Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IRFS650A | N-Channel MOSFET Transistor |
IRFS650B Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode...