IRFS650A Key Features
- Avalanche Rugged Technology -Rugged Gate Oxide Technology -Lower Input Capacitance -Improved Gate Charge -Extended Safe
- Part: IRFS650A
- Manufacturer: Inchange Semiconductor (official site)
- Size: 53.24 KB
Other IRFS650A Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild |
IRFS650A | Advanced Power MOSFET |
|
Fairchild |
IRFS650B | 200V N-Channel MOSFET |
IRFS650A Description
·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. ID= 0.25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current...