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MM74C89 - 64-Bit 3-STATE Random Access Read/Write Memory

General Description

The MM74C89 is a 16-word by 4-bit random access read/ write memory.

Inputs to the memory consist of four address lines, four data input lines, a write enable line and a memory enable line.

The four binary address inputs are decoded internally to select each of the 16 possible word locations.

Key Features

  • s Wide supply voltage range: s Guaranteed noise margin: s High noise immunity: 3.0V to 15V 1.0V 0.45 VCC (typ. ) s Low power TTL compatibility: fan out of 2 driving 74L s Low power consumption: s 3-STATE output Note: The timing is different than the DM7489 in that a positive to negative transition of the memory enable must occur for the memory to be selected. 100 nW/package (typ. ) s Fast access time: 130 ns (typ. ) at VCC = 10V Ordering Code: Order Number MM74C89N Package Number Package Descrip.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MM74C89 64-Bit 3-STATE Random Access Read/Write Memory October 1987 Revised January 1999 MM74C89 64-Bit 3-STATE Random Access Read/Write Memory General Description The MM74C89 is a 16-word by 4-bit random access read/ write memory. Inputs to the memory consist of four address lines, four data input lines, a write enable line and a memory enable line. The four binary address inputs are decoded internally to select each of the 16 possible word locations. An internal address register latches the address information on the positive to negative transition of the memory enable input. The four 3-STATE data output lines working in conjunction with the memory enable input provide for easy memory expansion.