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MM74C89 - 64-Bit TRI-STATE Random Access Read/Write Memory

General Description

The MM54C89 MM74C89 is a 16-word by 4-bit random access read write memory Inputs to the memory consist of four address lines four data input lines a write enable line and a memory enable line The four binary address inputs are decoded internally to select each of the 16 possible word locations An in

Key Features

  • Y Y Y Y Y Y Y Wide supply voltage range 3 0V to 15V Guaranteed noise margin 1 0V High noise immunity 0 45 VCC (typ ) Low power fan out of 2 TTL compatibility driving 74L Low power consumption 100 nW package (typ ) Fast access time 130 ns (typ ) at VCC e 10V TRI-STATE output Write Operation Information present at the data inputs is written into the memory at the selected address by bringing write enable and memory enable low Logic and Connection Diagrams Dual-In-Line Package Top View TL F.

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Datasheet Details

Part number MM74C89
Manufacturer National
File Size 130.18 KB
Description 64-Bit TRI-STATE Random Access Read/Write Memory
Datasheet download datasheet MM74C89 Datasheet

Full PDF Text Transcription (Reference)

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MM54C89 MM74C89 64-Bit TRI-STATE Random Access Read Write Memory March 1988 MM54C89 MM74C89 64-Bit TRI-STATE Random Access Read Write Memory General Description The MM54C89 MM74C89 is a 16-word by 4-bit random access read write memory Inputs to the memory consist of four address lines four data input lines a write enable line and a memory enable line The four binary address inputs are decoded internally to select each of the 16 possible word locations An internal address register latches the address information on the positive to negative transition of the memory enable input The four TRI-STATE data output lines working in conjunction with the memory enable input provide for easy memory expansion Address Operation Address inputs must be stable tSA prior to the positive to negative transi