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MMBTA13 NPN Darlington Transistor
January 2005
MMBTA13
NPN Darlington Transistor
• This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics.
3
2
SOT-23 1 Mark: 1M 1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCES VCBO VEBO IC TJ, TSTG
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range
Value
30 30 10 1.