| Overview |
SMBTA13/ MMBTA13, SMBTA14/ MMBTA14
NPN Silicon Darlington Transistors
High DC current gain High collector current Low collector-emitter saturation voltage
3
2 1
VPS05161
Type SMBTA13/ MMBTA13.
emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 DC curre.
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