NDB408AE Overview
Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
Key Features
- RDS(ON) = 0.16 and 0.20Ω
- Critical DC electrical parameters specified at elevated temperature
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
- 175°C maximum junction temperature rating
- High density cell design (3 million/in²) for extremely low RDS(ON)
- TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications
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