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NDB410BE - N-Channel MOSFET

Datasheet Summary

Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • 9 and 8A, 100V. RDS(ON) = 0.25 and 0.30Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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Datasheet Details

Part number NDB410BE
Manufacturer Fairchild
File Size 74.01 KB
Description N-Channel MOSFET
Datasheet download datasheet NDB410BE Datasheet
Additional preview pages of the NDB410BE datasheet.

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Full PDF Text Transcription

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May 1994 NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor General Description These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 9 and 8A, 100V. RDS(ON) = 0.
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