Datasheet4U Logo Datasheet4U.com

NDB708A Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

📥 Download Datasheet

General Description

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.

These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Overview

May 1994 NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect.

Key Features

  • 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

More Datasheets from Fairchild (now onsemi)

Part Number Description
NDB708AE N-Channel MOSFET
NDB708B N-Channel MOSFET
NDB708BE N-Channel MOSFET
NDB7050 N-Channel MOSFET
NDB7050L N-Channel MOSFET
NDB7051 N-Channel MOSFET
NDB7051L N-Channel MOSFET
NDB7052 N-Channel MOSFET
NDB7052L N-Channel MOSFET
NDB7060 N-Channel MOSFET