Datasheet4U Logo Datasheet4U.com

NDH8303N Datasheet Dual N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: May 1997 NDH8303N Dual N-Channel Enhancement Mode Field Effect.

General Description

SuperSOTTM-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications such as notebook computer power management, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Key Features

  • 3.8 A, 20 V. RDS(ON) = 0.035 Ω @ VGS = 4.5 V RDS(ON) = 0.045 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD.

More Datasheets from Fairchild (now onsemi)

Part Number Description
NDH8301N Dual N-Channel MOSFET
NDH8304 Dual P-Channel MOSFET
NDH8304P Dual P-Channel MOSFET
NDH831N N-Channel MOSFET
NDH8320C Dual N&P-Channel MOSFET
NDH8321C Dual N&P-Channel MOSFET
NDH832P P-Channel MOSFET
NDH833N N-Channel MOSFET
NDH834P P-Channel MOSFET
NDH8436 N-Channel MOSFET

NDH8303N Distributor