NDH8304
Description
Super SOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
-2.7 A, -20 V. RDS(ON) = 0.07 Ω @ VGS = -4.5 V RDS(ON) = 0.095 Ω @ VGS = -2.7 V. Proprietary Super SOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
5 6 7 8
4 3 2 1
Absolute Maximum Ratings T A = 25°C unless otherwise...
