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NDP6050 - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • 48A, 50V. RDS(ON) = 0.025Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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Datasheet preview – NDP6050

Datasheet Details

Part number NDP6050
Manufacturer Fairchild
File Size 66.48 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet NDP6050 Datasheet
Additional preview pages of the NDP6050 datasheet.

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Full PDF Text Transcription

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March 1996 NDP6050 / NDB6050 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 48A, 50V. RDS(ON) = 0.025Ω @ VGS=10V.
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