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NDP6060L - N-Channel FET

Datasheet Summary

Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V. Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount.

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Datasheet Details

Part number NDP6060L
Manufacturer Fairchild
File Size 360.51 KB
Description N-Channel FET
Datasheet download datasheet NDP6060L Datasheet
Additional preview pages of the NDP6060L datasheet.

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Full PDF Text Transcription

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April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V.
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