NDP6060L Overview
Key Specifications
Package: TO-220AB
Mount Type: Through Hole
Pins: 3
Height: 20.4 mm
Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
Key Features
- RDS(ON) = 0.025Ω @ VGS = 5V
- Low drive requirements allowing operation directly from logic drivers
- Critical DC electrical parameters specified at elevated temperature
- Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor
- 175°C maximum junction temperature rating
