NDP6060 Overview
Key Specifications
Package: TO-220AB
Mount Type: Through Hole
Pins: 3
Max Operating Temp: 175 °C
Description
These N-Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
Key Features
- RDS(ON) = 0.025 mW @ VGS = 10 V
- Critical DC Electrical Parameters Specified at Elevated Temperature
- Rugged Internal Source-Drain Diode Can Eliminate the Need for an External Zener Diode Transient Suppressor
- 175°C Maximum Junction Temperature Rating
- High Density Cell Design for Extremely Low RDS(ON)
