NDP6060 Description
These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on−state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and mutation modes. These devices are particularly suited for low voltage applications such as...
NDP6060 Key Features
- 48 A, 60 V
- RDS(ON) = 0.025 mW @ VGS = 10 V
- Critical DC Electrical Parameters Specified at Elevated Temperature
- Rugged Internal Source-Drain Diode Can Eliminate the Need for an
- 175°C Maximum Junction Temperature Rating
- High Density Cell Design for Extremely Low RDS(ON)
- TO-220 Package for Both Through Hole and Surface Mount