NDP6060 Datasheet and Specifications PDF

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailo.

48A, 60V. RDS(ON) = 0.025Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low.

These N−Channel enhancement mode power field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been especially tailored.

* 48 A, 60 V
* RDS(ON) = 0.025 mW @ VGS = 10 V
* Critical DC Electrical Parameters Specified at Elevated Temperature
* Rugged Internal Source
*Drain Diode Can Eliminate the Need for an External Zener Diode Transient Suppressor
* 175°C Maximum Junction Temperature Rating
* High Density Cell Design for.