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NDS8433 - single P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • -5.2A, -20V. RDS(ON) = 0.055Ω @ VGS = -4.5V RDS(ON) = 0.075Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________ 5 6 7 4 3 2 1 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25°C unless otherwise noted NDS.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
NDS8434 Single P-Channel MOSFET
NDS8434A Single P-Channel MOSFET
NDS8435 Single P-Channel MOSFET
NDS8435A Single P-Channel MOSFET
NDS8410 Single N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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June 1996 NDS8433 Single P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. Features -5.2A, -20V. RDS(ON) = 0.055Ω @ VGS = -4.5V RDS(ON) = 0.075Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON).