NDS8433
Overview
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
- 2A, -20V. RDS(ON) = 0.055Ω @ VGS = -4.5V RDS(ON) = 0.075Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. 5 6 7 4 3 2 1
