NDS8433 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits...
NDS8433 Key Features
- 5.2A, -20V. RDS(ON) = 0.055Ω @ VGS = -4.5V RDS(ON) = 0.075Ω @ VGS = -2.7V. High density cell design for extremely low RD