NDS8435A
Overview
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
- 9 A, -30 V. RDS(ON) = 0.023 Ω @ VGS = -10 V RDS(ON) = 0.035 Ω @ VGS = -4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. 5 6 7 4 3 2 1
