Datasheet4U Logo Datasheet4U.com

NDS8961 - Dual N-Channel MOSFET

Description

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

Features

  • 3.1 A, 30 V. RDS(ON) = 0.1 Ω @ VGS = 10 V RDS(ON) = 0.15 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain C.

📥 Download Datasheet

Datasheet preview – NDS8961

Datasheet Details

Part number NDS8961
Manufacturer Fairchild
File Size 331.09 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet NDS8961 Datasheet
Additional preview pages of the NDS8961 datasheet.

📁 Similar Datasheet

  • NDS8434 - Single P-Channel Enhancement Mode Field Effect Transistor (ON Semiconductor)
  • NDS02ZG-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZA - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZA-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZB-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZD-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS03ZE-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs (Power-One)
  • NDS0610 - P-Channel Enhancement Mode Field Effect Transistor (ON Semiconductor)
  • NDS331N - N-Channel MOSFET (VBsemi)
  • NDS351AN - N-Channel MOSFET (ON Semiconductor)
Other Datasheets by Fairchild

Full PDF Text Transcription

Click to expand full text
June 1997 NDS8961 Dual N-Channel Enhancement Mode Field Effect Transistor General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. Features 3.1 A, 30 V. RDS(ON) = 0.1 Ω @ VGS = 10 V RDS(ON) = 0.15 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
Published: |