NDS9936
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
Key Features
- RDS(ON) = 0.05Ω @ VGS = 10V
- High density cell design for extremely low RDS(ON)
- High power and current handling capability in a widely used surface mount package
- Dual MOSFET in surface mount package
