Datasheet4U Logo Datasheet4U.com

NDS9936 Datasheet Dual N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: February 1996 NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • 5A, 30V. RDS(ON) = 0.05Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ________________________________________________________________________________ 5 4 3 2 1 6 7 8 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous @ TA = 25°C - Continuous @ TA.

More Datasheets from Fairchild (now onsemi)

Part Number Description
NDS9933A Dual P-Channel MOSFET
NDS9925A Dual N-Channel MOSFET
NDS9945 Dual N-Channel MOSFET
NDS9947 Dual P-Channel MOSFET
NDS9948 Dual P-Channel MOSFET
NDS9952A Dual N&P-Channel MOSFET
NDS9953A Dual P-Channel MOSFET
NDS9955 Dual N-Channel MOSFET
NDS9956A Dual N-Channel MOSFET
NDS9957 Dual N-Channel MOSFET

NDS9936 Distributor