Datasheet4U Logo Datasheet4U.com

NDT014 - N-Channel MOSFET

General Description

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise noted.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NDT014 N-Channel MOSFET VBsemi
NDT01N60 N-Channel Power MOSFET ON Semiconductor
NDT01N60T1G N-Channel Power MOSFET ON Semiconductor
NDT02N40 N-Channel Power MOSFET ON Semiconductor
NDT02N60Z N-Channel Power MOSFET ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
NDT014L N-Channel MOSFET
NDT2955 P-Channel MOSFET
NDT3055 N-Channel MOSFET
NDT3055L N-Channel MOSFET
NDT410EL N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
September 1996 NDT014 N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. Features 2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.