SSP6N90A Datasheet | Fairchild Semiconductor

FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 1.829 Ω (Typ.) 1 2 3 BVDSS = 900 V RDS(on) = 2.3 Ω ID = 6 A TO-220 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds Ο Ο Ο Value 900 6 3.8 1 O Units V A A V m J A m J V/ns W W/ C Ο 24 + _ 30 667 6 16 1.5 160 1.28 - 55 to +150 O 1 O 1 O 3 O Ο Thermal Resistance Symbol R R R θJC θCS θJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -- Max. 0.78 -62.5 Units Ο C /W Rev. B ©1999 Fairchild Semiconductor Corporation Electrical Characteristics (TC=25 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain(“Miller”) Charge Ο N-CHANNEL POWER MOSFET C unless otherwise specified) Min. Typ. Max. Units 900 -2.0 -----------------1.10 ------4.28 --3.5 100 -100 25 250 2.3 -µA Ω Ω p F V V n A Test Condition VGS=0V,ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=30V VGS=-30V...