6N40C Description
Features 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A Low Gate Charge (Typ. 15 pF) 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy...
6N40C Key Features
- 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A
- Low Gate Charge (Typ. 16 nC)
- Low Crss (Typ. 15 pF)
- 100% Avalanche Tested