FDC86244 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
FDC86244 Key Features
- Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A
- Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- Fast switching speed
- 100% UIL Tested
- RoHS pliant