FDC86244
FDC86244 is N-Channel MOSFET manufactured by onsemi.
MOSFET
- N-Channel, Shielded Gate, POWERTRENCH)
150 V, 2.3 A, 144 m W
General Description This N- Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for r DS(on), switching performance and ruggedness.
Features
- Shielded Gate MOSFET Technology
- Max r DS(on) = 144 m W at VGS = 10 V, ID = 2.3 A
- Max r DS(on) = 188 m W at VGS = 6 V, ID = 1.9 A
- High Performance Trench Technology for Extremely Low r DS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb- Free, Halogen Free/BFR Free and is Ro HS pliant
Applications
- Load Switch
- Synchronous Rectifier
- Primary Switch
.onsemi.
TSOT23 6- Lead CASE 419BL
MARKING DIAGRAM
&E&Y &.244&G 1
XXX = Specific Device Code &E = Space Designator &Y = Year of Production &. = Pin One Identifier G = Pb- Free Package
PINOUT
S4 D5 D6
3G 2D 1D
Super SOTTM- 6
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
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