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FDC86244 - N-Channel MOSFET

General Description

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A.
  • Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A.
  • High Performance Trench Technology for Extremely Low rDS(on).
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halogen Free/BFR Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDC86244
Manufacturer onsemi
File Size 531.98 KB
Description N-Channel MOSFET
Datasheet download datasheet FDC86244 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, Shielded Gate, POWERTRENCH) 150 V, 2.3 A, 144 mW FDC86244 General Description This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness. Features • Shielded Gate MOSFET Technology • Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A • Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A • High Performance Trench Technology for Extremely Low rDS(on) • High Power and Current Handling Capability in a Widely Used Surface Mount Package • Fast Switching Speed • 100% UIL Tested • This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Applications • Load Switch • Synchronous Rectifier • Primary Switch www.onsemi.