FDC86244 - N-Channel MOSFET

Product Overview

ON Semiconductor

Part number	FDC86244
Manufacturer	ON Semiconductor
File Size	531.98 KB
Description	N-Channel MOSFET
Datasheet	FDC86244 Datasheet
Additional preview pages of the FDC86244 datasheet.

This N

advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Shielded Gate MOSFET Technology.
Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A.
Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halogen Free/BFR Free and is RoHS Compliant.

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Published: Dec 21, 2023 |