The FDC86244 is a N-Channel MOSFET.
| Package | SOT-23-6 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 6 |
| Height | 1.1 mm |
| Length | 3 mm |
| Width | 1.7 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | FDC86244 Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type N-Channel MOSFET FDC86244 (KDC86244) MOSFET Ƶ Features ƽ VDS (V) = 150V ƽ ID = 2.3 A (VGS = 10V) ƽ RDS(ON) ˘ 144m¡ (VGS = 10V) ƽ RDS(ON) ˘ 188m¡ (VGS = 6V) ƽ Fast switching speed 4S 5D 6D. ƽ VDS (V) = 150V ƽ ID = 2.3 A (VGS = 10V) ƽ RDS(ON) ˘ 144m¡ (VGS = 10V) ƽ RDS(ON) ˘ 188m¡ (VGS = 6V) ƽ Fast switching speed 4S 5D 6D G3 D2 D1 ( SOT-23-6 ) 0.4+0.1 -0.1 6 5 4 1 2 3 +0.01 -0.01 +0.2 -0.1 1.6 2.8 8QLW PP . |
| Part Number | FDC86244 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using ON Semiconductor’s
advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance a.
* Shielded Gate MOSFET Technology * Max rDS(on) = 144 mW at VGS = 10 V, ID = 2.3 A * Max rDS(on) = 188 mW at VGS = 6 V, ID = 1.9 A * High Performance Trench Technology for Extremely Low rDS(on) * High Power and Current Handling Capability in a Widely Used Surface Mount Package * Fast Switching Speed. |
| Part Number | FDC86244 Datasheet |
|---|---|
| Description | N-Channel Power Trench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Applications
Load Switch .
* Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A * Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A * High performance trench technology for extremely low rDS(on) * High power and current handling capability in a widely used surface mount package * Fast switching speed * 100% UIL Tested * RoHS Complian. |
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