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FDC86244 - N-Channel Power Trench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

Load Switch Synchronous Rectifier Primary Switch S D D D G D Pin 1 D -6 D 6 1 D Sup

Key Features

  • Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A.
  • Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability in a widely used surface mount package.
  • Fast switching speed.
  • 100% UIL Tested.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC86244 N-Channel Power Trench® MOSFET November 2010 FDC86244 N-Channel Power Trench® MOSFET 150 V, 2.3 A, 144 mΩ Features „ Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A „ Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.