FDC86244 Datasheet | Fairchild Semiconductor

FDC86244 N-Channel Power Trench® MOSFET November 2010 N-Channel Power Trench® MOSFET 150 V, 2.3 A, 144 mΩ Features - Max r DS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A - Max r DS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A - High performance trench technology for extremely low r DS(on) - High power and current handling capability in a widely used surface mount package - Fast switching speed - 100% UIL Tested - Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for r DS(on), switching performance and ruggedness. Applications - Load Switch - Synchronous Rectifier - Primary Switch S D D D G D Pin 1 D -6 D 6 1 D Super SOTTM 5 2 D S 4 3 G MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range (Note 3) (Note 1a) (Note 1b) (Note 1a) Ratings 150 ±20 2.3 10 12 1.6 0.8 -55 to +150 Units V V A m J W °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 30 78 °C/W Package Marking and Ordering Information Device Marking .244 Device FDC86244 Package SSOT-6 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation FDC86244 Rev.C .fairchildsemi. FDC86244 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max...