Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Load Switch
Synchronous Rectifier
Primary Switch
S D D D G D Pin 1 D -6 D 6 1 D Sup
Features
- Max rDS(on) = 144 mΩ at VGS = 10 V, ID = 2.3 A.
- Max rDS(on) = 188 mΩ at VGS = 6 V, ID = 1.9 A.
- High performance trench technology for extremely low rDS(on).
- High power and current handling capability in a widely used surface mount package.
- Fast switching speed.
- 100% UIL Tested.
- RoHS Compliant
General.
FDC86244 Datasheet
