FDD5353 Description
Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A 100% UIL Tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RoHS pliant Application Inverter Synchronous rectifier Primary switch G S D DT O-P-2A5K2 (T O...
FDD5353 Key Features
- Max rDS(on) = 12.3m at VGS = 10V, ID = 10.7A
- Max rDS(on) = 15.4m at VGS = 4.5V, ID = 9.5A
- 100% UIL Tested
- RoHS pliant
- Inverter
- Synchronous rectifier
- Primary switch