FDD5810 Description
FDD5810 N-Channel Logic Level Trench® MOSFET MPLEMENTATION October 2007 FDD5810 N-Channel Logic Level Trench® MOSFET 60V, 36A, 27mΩ.
FDD5810 Key Features
- RDS(ON) = 22mΩ (Typ.), VGS = 5V, ID = 29A
- Qg(5) = 13nC (Typ.), VGS = 5V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse / Repetitive Pulse)
- Qualified to AEC Q101
- RoHS pliant