FDG315N Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDG315N Key Features
- Low gate charge (2.1nC typical). High performance trench technology for extremely low RDS(ON). pact industry standard SC