FDG328P Description
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V 12V).
FDG328P Key Features
- 1.5 A, -20 V. RDS(ON) = 0.145 Ω @ VGS = -4.5 V RDS(ON) = 0.210 Ω @ VGS = -2.5 V Low gate charge High performance trench