Datasheet Details
| Part number | FDG328P |
|---|---|
| Manufacturer | onsemi |
| File Size | 300.72 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDG328P Datasheet
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General Description
This P
gate version of ON Semiconductor’s advanced POWERTRENCH process.
12 V).
Key Features
- 1.5 A,.
- 20 V.
- RDS(ON) = 0.145 W @ VGS =.
- 4.5 V.
- RDS(ON) = 0.210 W @ VGS =.
- 2.5 V.
- Low Gate Charge.
- High Performance Trench Technology for Extremely Low RDS(ON).
- Compact Industry Standard SC70.
- 6 Surface Mount Package.
- These Devices are Pb.
- Free and are RoHS Compliant.