FDG6316P Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
FDG6316P Key Features
- 0.7 A, -12 V. RDS(ON) = 270 mΩ @ VGS = -4.5 V RDS(ON) = 360 mΩ @ VGS = -2.5 V RDS(ON) = 650 mΩ @ VGS = -1.8 V