FDG6332C Description
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
FDG6332C Key Features
- Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V
- Q2 -0.6 A, -20V. RDS(ON) = 420 mΩ @ VGS = -4.5 V RDS(ON) = 630 mΩ @ VGS = -2.5 V
- Low gate charge
- High performance trench technology for extremely low RDS(ON)
- SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)