FDG6335N Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
FDG6335N Key Features
- 0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V
- Low gate charge (1.1 nC typical)
- High performance trench technology for extremely low RDS(ON)
- pact industry standard SC70-6 surface mount package