FDMC610P Description
This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance. Applications High side switching for high end puting High power density DC-DC...
FDMC610P Key Features
- Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
- Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
- State-of-the-art switching performance
- Lower output capacitance, gate resistance, and gate charge boost efficiency
- Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction
- RoHS pliant