FDMC610P
Overview
This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
- Max rDS(on) = 3.9 mW at VGS = -4.5 V, ID = -22 A
- Max rDS(on) = 6.4 mW at VGS = -2.5 V, ID = -16 A
- State-of-the-art Switching Performance
- Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Efficiency
- Shielded Gate Technology Reduces Switch Node Ringing and Increases Immunity to EMI and Cross Conduction
- This Device is Pb-Free, Halide Free and is RoHS Compliant
