Datasheet Details
| Part number | FDMC610P |
|---|---|
| Manufacturer | onsemi |
| File Size | 369.32 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 FDMC610P Datasheet
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General Description
This P
the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
Key Features
- Max rDS(on) = 3.9 mW at VGS =.
- 4.5 V, ID =.
- 22 A.
- Max rDS(on) = 6.4 mW at VGS =.
- 2.5 V, ID =.
- 16 A.
- State.
- of.
- the.
- art Switching Performance.
- Lower Output Capacitance, Gate Resistance, and Gate Charge Boost Efficiency.
- Shielded Gate Technology Reduces Switch Node Ringing and Increases Immunity to EMI and Cross Conduction.
- This Device is Pb.
- Free, Halide Free and is RoHS Compliant A.