FDMC8360L Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. ©2013 Fairchild Semiconductor Corporation FDMC8360L Rev.
FDMC8360L Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A
- Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A
- High performance technology for extremely low rDS(on)
- Termination is Lead-free
- 100% UIL Tested
- RoHS pliant
- DC-DC Conversion