Datasheet4U Logo Datasheet4U.com

FDMC8360L - N-Channel MOSFET

Datasheet Summary

Description

This N

POWERTRENCH process that incorporates Shielded Gate technology.

state resistance and yet maintain superior switching performance.

Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A.
  • Max RDS(on) = 3.1 mW at VGS = 4.5 V, ID = 22 A.
  • High Performance Technology for Extremely Low RDS(on).
  • Termination is Lead.
  • Free.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet preview – FDMC8360L

Datasheet Details

Part number FDMC8360L
Manufacturer ON Semiconductor
File Size 408.27 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC8360L Datasheet
Additional preview pages of the FDMC8360L datasheet.

📁 Similar Datasheet

  • FDMC8360L - N-Channel Shielded Gate Power Trench MOSFET (Fairchild Semiconductor)
  • FDMC8321L - N-Channel Power Trench MOSFET (Fairchild Semiconductor)
  • FDMC8321LDC - MOSFET (Fairchild Semiconductor)
  • FDMC8327L - MOSFET (Fairchild Semiconductor)
  • FDMC8010 - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDMC8010DC - N-Channel Dual Cool 33 PowerTrench MOSFET (Fairchild Semiconductor)
  • FDMC8010ET30 - MOSFET (Fairchild Semiconductor)
  • FDMC8015L - MOSFET (Fairchild Semiconductor)
  • FDMC8026S - N-Channel MOSFET (Fairchild Semiconductor)
  • FDMC8030 - Dual N-Channel Power MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFET – N-Channel, Shielded Gate POWERTRENCH) 40 V, 80 A, 2.1 mW FDMC8360L General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A • Max RDS(on) = 3.1 mW at VGS = 4.
Published: |