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FDMC8360L Datasheet N-Channel MOSFET

Manufacturer: onsemi

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General Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

This process has been optimized for the on−state resistance and yet maintain superior switching performance.

Overview

MOSFET – N-Channel, Shielded Gate POWERTRENCH) 40 V, 80 A, 2.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A.
  • Max RDS(on) = 3.1 mW at VGS = 4.5 V, ID = 22 A.
  • High Performance Technology for Extremely Low RDS(on).
  • Termination is Lead.
  • Free.
  • 100% UIL Tested.
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant.

📁 Similar Datasheet

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