| Part Number | FDMC8360L Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain s.
* Shielded Gate MOSFET Technology * Max RDS(on) = 2.1 mW at VGS = 10 V, ID = 27 A * Max RDS(on) = 3.1 mW at VGS = 4.5 V, ID = 22 A * High Performance Technology for Extremely Low RDS(on) * Termination is Lead *Free * 100% UIL Tested * This Device is Pb *Free, Halide Free and is RoHS Compliant Applica. |
FDMC8360L Datasheet and Specifications PDF
The FDMC8360L is a N-Channel MOSFET.
| Part Number | FDMC8360L Datasheet |
|---|---|
| Description | N-Channel Shielded Gate Power Trench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance .
* Shielded Gate MOSFET Technology * Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A * Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A * High performance technology for extremely low rDS(on) * Termination is Lead-free * 100% UIL Tested * RoHS Compliant General Description This N-Channel MOSFET is produ. |