FDMC8360L Datasheet | Fairchild Semiconductor

FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 N-Channel Shielded Gate Power Trench® MOSFET 40 V, 80 A, 2.1 mΩ Features - Shielded Gate MOSFET Technology - Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A - Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A - High performance technology for extremely low rDS(on) - Termination is Lead-free - 100% UIL Tested - RoHS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance. Application - DC-DC...