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FDMC8360L - N-Channel Shielded Gate Power Trench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

DC-DC Conversion Pin 1 Pin

Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A.
  • Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A.
  • High performance technology for extremely low rDS(on).
  • Termination is Lead-free.
  • 100% UIL Tested.
  • RoHS Compliant General.

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Datasheet preview – FDMC8360L

Datasheet Details

Part number FDMC8360L
Manufacturer Fairchild Semiconductor
File Size 377.00 KB
Description N-Channel Shielded Gate Power Trench MOSFET
Datasheet download datasheet FDMC8360L Datasheet
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Full PDF Text Transcription

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FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET June 2013 FDMC8360L N-Channel Shielded Gate Power Trench® MOSFET 40 V, 80 A, 2.1 mΩ Features „ Shielded Gate MOSFET Technology „ Max rDS(on) = 2.1 mΩ at VGS = 10 V, ID = 27 A „ Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A „ High performance technology for extremely low rDS(on) „ Termination is Lead-free „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.
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