FDMC86248 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMC86248 Key Features
- Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A
- Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- 100% UIL Tested
- RoHS pliant