FDMC86320 Description
Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A MSL1 robust package design 100% UIL Tested RoHS pliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low...
FDMC86320 Key Features
- Max rDS(on) = 11.7 mΩ at VGS = 10 V, ID = 10.7 A
- Max rDS(on) = 16 mΩ at VGS = 8 V, ID = 8.5 A
- MSL1 robust package design
- 100% UIL Tested
- RoHS pliant