FDMC8878 Description
Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A Low Profile - 1mm max in Power 33 RoHS pliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.
FDMC8878 Key Features
- Max rDS(on) = 14mΩ at VGS = 10V, ID = 9.6A
- Max rDS(on) = 17mΩ at VGS = 4.5V, ID = 8.7A
- Low Profile
- 1mm max in Power 33
- RoHS pliant