FDME1024NZT Description
This device is designed specifically as a single package solution for dual switching requirement in cellular handset and other ultraportable applications.
FDME1024NZT Key Features
- Max rDS(on) = 66 mΩ at VGS = 4.5 V, ID = 3.4 A
- Max rDS(on) = 86 mΩ at VGS = 2.5 V, ID = 2.9 A
- Max rDS(on) = 113 mΩ at VGS = 1.8 V, ID = 2.5 A
- Max rDS(on) = 160 mΩ at VGS = 1.5 V, ID = 2.1 A
- Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin
- Free from halogenated pounds and antimony oxides
- HBM ESD protection level > 1600V (Note3)
- RoHS pliant