FDMS4435BZ Description
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Applications High side in DC-DC Buck Converters Notebook battery power management Load switch in Notebook Top...
FDMS4435BZ Key Features
- Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A
- Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A
- Extended VGSS range (-25 V) for battery