FDN306P Description
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
FDN306P Key Features
- 2.6 A, -12 V. RDS(ON) = 40 mΩ @ VGS = -4.5 V RDS(ON) = 50 mΩ @ VGS = -2.5 V RDS(ON) = 80 mΩ @ VGS = -1.8 V