FDP14N30 Description
February 2007 TM These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode...
FDP14N30 Key Features
- 14A, 300V, RDS(on) = 0.29Ω @VGS = 10 V
- Low gate charge ( typical 18 nC)
- Low Crss ( typical 17 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability