Datasheet Summary
FDP10N50F / FDPF10N50FT N-Channel MOSFET
FDP10N50F / FDPF10N50FT
N-Channel MOSFET
500V, 9A, 0.85Ω
Features
- RDS(on) = 0.71Ω ( Typ.) @ VGS = 10V, ID = 4.5A
- Low Gate Charge ( Typ. 18nC)
- Low Crss ( Typ. 10pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS pliant
January 2009
UniFETTM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well...