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FDP10N50F - MOSFET

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Fairchild Semiconductor

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FDP10N50F MOSFET by Fairchild Semiconductor - Datasheet Preview — Datasheet preview – FDP10N50F

Datasheet Details

Part number	FDP10N50F
Manufacturer	Fairchild Semiconductor
File Size	613.60 KB
Description	MOSFET
Datasheet	FDP10N50F Datasheet
Additional preview pages of the FDP10N50F datasheet.

Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

RDS(on) = 0.71Ω ( Typ. ) @ VGS = 10V, ID = 4.5A.
Low Gate Charge ( Typ. 18nC).
Low Crss ( Typ. 10pF).
Fast Switching.
100% Avalanche Tested.
Improved dv/dt Capability.
RoHS Compliant January 2009 UniFETTM.

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Published: Jan 11, 2017 |